Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature
superconductor.[4]
SnTe exists in three crystal phases. At Low temperatures, where the concentration of hole carriers is less than 1.5x1020cm−3 , Tin Telluride exists in rhombohedral phase also known as α-SnTe.
At room temperature and atmospheric pressure, Tin Telluride exists in NaCl-like cubic crystal phase, known as β-SnTe.
While at 18 kbar pressure, β-SnTe transforms to γ-SnTe, orthorhombic phase, space group Pnma.[5] This phase change is characterized by 11 percent increase in density and 360 percent increase in resistance for γ-SnTe.[6]
Tin telluride is a thermoelectric material. Theoretical studies
imply that the n-type performance may be particularly good.[7]
Generally Pb is alloyed with SnTe in order to access interesting optical and electronic properties, In addition, as a result of Quantum confinement, the band gap of the SnTe increases beyond the bulk band gap, covering the mid-IR wavelength range. The alloyed material has been used in mid- IR photodetectors[9] and thermoelectric generator.[10]
^"Tin telluride (SnTe) crystal structure, lattice parameters". Non-Tetrahedrally Bonded Elements and Binary Compounds I. Landolt-Börnstein - Group III Condensed Matter. Vol. 41C. 1998. pp. 1–8. doi:10.1007/10681727_862. ISBN978-3-540-64583-2.
^Kafalas, J. A.; Mariano, A. N., High-Pressure Phase Transition in Tin Telluride. Science 1964, 143 (3609), 952-952
^Colin, R.; Drowart, J., Thermodynamic study of tin selenide and tin telluride using a mass spectrometer. Transactions of the Faraday Society 1964, 60 (0), 673-683, DOI: 10.1039/TF9646000673.
^Lovett, D. R. Semimetals and narrow-bandgap semiconductors; Pion Limited: London, 1977; Chapter 7.
^Das, V. D.; Bahulayan, C., Variation of electrical transport properties and thermoelectric figure of merit with thickness in 1% excess Te-doped Pb 0.2 Sn 0.8 Te thin films. Semiconductor Science and Technology 1995, 10 (12), 1638.
