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Hafnium disulfide






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From Wikipedia, the free encyclopedia
  
(Redirected from Hafnium(IV) sulfide)
Hafnium disulfide
Names
IUPAC name

Hafnium disulfide

Identifiers

CAS Number

3D model (JSmol)
ChemSpider
ECHA InfoCard 100.038.738 Edit this at Wikidata

PubChem CID

CompTox Dashboard (EPA)

  • InChI=1S/Hf.2S checkY

  • S=[Hf]=S

Properties

Chemical formula

 HfS2
Molar mass 246.62 g/mol[1]
Appearance Brown solid
Density 6.03 g/cm3[1]
Band gap ~1.8 eV (indirect)[2]
Structure

Crystal structure

 hP3, P3m1, No 164[3]

Lattice constant

a = 0.363 nm, c = 0.584 nm

Formula units (Z)

 1
Related compounds

Other anions

 Hafnium dioxide

Other cations

 Tungsten disulfide
Molybdenum disulfide

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

☒N verify (what is checkY☒N ?)

Infobox references

Hafnium disulfide is an inorganic compoundofhafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor.[4] High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes.[5] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.[6]

References[edit]

Wikimedia Commons has media related to Hafnium disulfide.
  1. ^ a b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.66. ISBN 1-4398-5511-0.
  • ^ Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS2 and HfS2". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.
  • ^ Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S2−xTex)1-y and Hf(Se2−xTex)1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.
  • ^ Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS2 transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC 4772098. PMID 26926098.
  • ^ Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv:1611.00895. doi:10.1007/s12274-017-1636-x. S2CID 99414438.
  • ^ Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID 95277086.

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