| Names | |
|---|---|
| Systematic IUPAC name
Magnesium selenide | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.013.820 
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| EC Number |
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PubChem CID |
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| UNII | |
CompTox Dashboard (EPA) |
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| Properties | |
| MgSe | |
| Molar mass | 103.27 g/mol[1] |
| Density | 4.21 g/cm3 (rock-salt)[2] 3.32 g/cm3 (zincblende)[1] |
| Melting point | 1,290 °C; 2,350 °F; 1,560 K[1] |
| Band gap | 3.9 eV (rock-salt) (300 K) 4.0 eV (zincblende) (300 K) |
| Structure | |
| Rock-salt (cubic) Zincblende (cubic) Wurtzite (hexagonal) | |
a = 0.55 nm (rock-salt) | |
| Related compounds | |
Other anions |
Magnesium oxide Magnesium sulfide Magnesium telluride |
Other cations |
Cadmium selenide Mercury selenide Zinc selenide |
Related compounds |
Magnesium zinc selenide Cadmium magnesium selenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Magnesium selenide is an inorganic compound with the chemical formula MgSe. It contains magnesium and selenium in a 1:1 ratio. It belongs to the II-VI familyofsemiconductor compounds.
Three crystal structures for MgSe have been experimentally characterized. The rock-salt structure is considered to be the most stable crystal structure that has been observed in bulk samples of MgSe, and a cubic lattice constant of 0.55 nm was deduced for this structure.[2] Although attempts at preparing pure zincblende MgSe have been unsuccessful,[3] the lattice constant of zincblende MgSe has been extrapolated from epitaxial thin films of zincblende MgxZn1-xSySe1-x and MgxZn1-xSe grown on gallium arsenide, the latter of which was prepared with a high magnesium content (up to 95% Mg, i.e., Mg0.95Zn0.05Se).[3][4] There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm.[1][2] The wurtzite structure of MgSe has been observed, but it is unstable and slowly converts to the rock-salt structure.[5]
NiAs- and FeSi-type crystal structures of MgSe are predicted to form by subjecting the rock-salt crystal structure to extremely high pressures.[2]
Both rock-salt and zincblende MgSe are semiconductors. On the basis of different extrapolations, a room temperature bandgap of 4.0 eV has been recommended for zincblende MgSe.[1][2] A room temperature bandgap of 3.9 eV was determined for rock-salt MgSe.[2][3]
Thin films of amorphous, wurtzite and rock-salt MgSe have been prepared by vacuum deposition of Mg and Se at cryogenic temperatures, followed by heating and annealing.[5] Compound semiconductor alloys of MgSe, such as MgxZn1-xSe, have been prepared by molecular beam epitaxy.[3][4]
Samples of pure MgSe and Mg-rich MgxZn1-xSe (x > 0.7) readily react with water and oxidize in air.[2][3]
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Salts and covalent derivatives of the selenide ion
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